AND APPLICATIONS The LP1500SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 1500 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance.
♦ 27.5 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 17 dB Power Gain at 1.8 GHz ♦ 1.0 dB Noise Figure ♦ 44 dBm Output IP3 at 1.8 GHz ♦ 50% Power-Added Efficiency
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DESCRIPTION AND APPLICATIONS The LP1500SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 1500 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | LP1500SOT223 |
Filtronic Compound Semiconductors |
Low Noise/ High Linearity Packaged PHEMT | |
2 | LP1500SOT2231 |
Filtronic Compound Semiconductors |
Low Noise/ High Linearity Packaged PHEMT | |
3 | LP1500SOT2232 |
Filtronic Compound Semiconductors |
Low Noise/ High Linearity Packaged PHEMT | |
4 | LP1500SOT2233 |
Filtronic Compound Semiconductors |
Low Noise/ High Linearity Packaged PHEMT | |
5 | LP1500 |
Filtronic Compound Semiconductors |
1W POWER PHEMT | |
6 | LP1500P100 |
Filtronic Compound Semiconductors |
PACKAGED 1W POWER PHEMT | |
7 | LP1503VR |
FLEX |
Surface finishing Metal and Wood | |
8 | LP150E02-A2P1 |
LG |
Liquid Crystal Display | |
9 | LP150E05-A2K1 |
LG |
SXGA+ TFT LCD | |
10 | LP150E06-A3K2 |
LG |
Liquid Crystal Display | |
11 | LP150E06-A3K4 |
LG |
SXGA+ TFT LCD | |
12 | LP150E06-B3K3 |
LG |
TFT LCD |