LMG3422R030 - Texas Instruments

LMG3422R030 GaN FET

The LMG342xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency. The LMG342xR030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discret.

Features

• Qualified for JEDEC JEP180 for hard-switching topologies
• 600V GaN-on-Si FET with integrated gate driver
  – Integrated high precision gate bias voltage
  – 200V/ns FET hold-off
  – 2.2MHz switching frequency
  – 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
  – Operates from 7.5V to 18V supply
• Robust protection
  – Cycle-by-cycle overcurrent and latched shortcircuit protection with < 100ns response
  – Withstands 720V surge while hard-switching
  – Self-protection from internal overtemperature and UVLO monitoring
• Advanced power management
  – Digital temperatur.