LMG3410R050 - Texas Instruments

LMG3410R050 Integrated GaN Fet Power Stage

The LMG341xR050 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch no.

Features

•1 TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles
• Enables high density power conversion designs
  – Superior system performance over cascode or stand-alone GaN FETs
  – Low inductance 8 mm x 8 mm QFN package for ease of design, and layout
  – Adjustable drive strength for switching performance and EMI control
  – Digital fault status output signal
  – Only +12 V unregulated supply needed
• Integrated gate driver
  – Zero common source inductance
  – 20 ns Propagation delay for MHz operation
  – Trimmed gate bias voltage to compensate for threshold variations .