LMG3410R150 - Texas Instruments

LMG3410R150 GaN FET

The LMG341xR150 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The inherent advantages of this device over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node .

Features

•1 TI GaN process qualified through accelerated reliability in-application hard-switching profiles
• Enables high-density power conversion designs
  – Superior system performance over cascode or stand-alone GaN FETs
  – Low inductance 8 mm × 8 mm QFN package for ease of design and layout
  – Adjustable drive strength for switching performance and EMI control
  – Digital fault status output signal
  – Only +12 V of unregulated supply needed
• Integrated gate driver
  – Zero common source inductance
  – 20-ns propagation delay for high-frequency design
  – Trimmed gate bias voltage to compensate for threshold v.