Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
............. 4 CE0, CE1, CE2 Truth Table ......... 5 Memory Map .. 6 Identifier Codes Address .............. 7 OTP Block Address Map.............. 8 Bus Operation...
• Individual Block Lock
• Absolute Protection with VPEN≤VPENLK
• Block Erase, (Page Buffer) Program Lockout during Power Transitions Automated Erase/Program Algorithms
• Program Time 210µs (Typ.)
• Block Erase Time 1s (Typ.) Cross-Compatible Command Support
• Basic Command Set
• Common Flash Interface (CFI) Extended Cycling Capability
• Minimum 100,000 Block Erase Cycles 56-Lead TSOP (Normal Bend) CMOS Process (P-type silicon substrate) ETOXTM
* Flash Technology Not designed or rated as radiation hardened
The product, which is Page Mode Flash memory, is a high density, low cost, .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | LH28F640SPHT-PTL12 |
Sharp Electrionic |
64Mbit (4Mbitx16/8Mbitx8) Page Flash Memory |
|
| 2 | LH28F640BF |
Sharp |
(LH28FxxxBF) Page Mode Dual Work Flash Memory |
|
| 3 | LH28F640BFHE-PBTL70A |
Sharp Microelectronics |
Flash Memory 64Mbit (4Mbitx16) |
|
| 4 | LH28F640BFHE-PTTLHFA |
Sharp |
64-Mbit Flash Memory |
|
| 5 | LH28F640BFHG-PBTLZ7 |
Sharp Electrionic |
64M (x16) Flash Memory |
|
| 6 | LH28F002SCH-L |
Sharp Electrionic Components |
2-MBIT(256KBx8) SmartVoltage Flash MEMORY |
|
| 7 | LH28F004SCB-L12 |
Sharp Electrionic Components |
4Mbit Flash Memory |
|
| 8 | LH28F004SCT-L85 |
Sharp Electrionic Components |
4M Flash File Memory |
|
| 9 | LH28F004SU |
Sharp Electrionic Components |
4Mbit(512Kbit x 8/ 256 Kbit x 16) 5V Single Voltage Flash Memory |
|
| 10 | LH28F004SU-LC |
Sharp Electrionic Components |
4M (512K bb 8) Flash Memory |
|
| 11 | LH28F004SU-NC |
Sharp Electrionic Components |
4M (512K bb 8) Flash Memory |
|
| 12 | LH28F004SU-Z1 |
Sharp Electrionic Components |
4M (512K bb 8) Flash Memory |
|