............. 4 Simultaneous Operation Modes Allowed with Four Planes .... 5 Memory Map .. 6 PAGE Extended Status Register Definition .......... 15 Partition Configuration Register Definition.............. 16 .
• Individual Block Lock and Block Lock-Down with Zero-Latency
• All blocks are locked at power-up or device reset.
• Absolute Protection with VPP≤VPPLK
• Block Erase, Full Chip Erase, (Page Buffer) Word Program Lockout during Power Transitions Automated Erase/Program Algorithms
• 3.0V Low-Power 11µs/Word (Typ.) Programming
• 12V No Glue Logic 9µs/Word (Typ.) Production Programming and 0.5s Erase (Typ.) Cross-Compatible Command Support
• Basic Command Set
• Common Flash Interface (CFI) Extended Cycling Capability
• Minimum 100,000 Block Erase Cycles 0.75mm pitch 48-Ball CSP (8mm×11mm) ETOXTM
* F.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | LH28F640BFHE-PBTL70A |
Sharp Microelectronics |
Flash Memory 64Mbit (4Mbitx16) | |
2 | LH28F640BFHE-PTTLHFA |
Sharp |
64-Mbit Flash Memory | |
3 | LH28F640BF |
Sharp |
(LH28FxxxBF) Page Mode Dual Work Flash Memory | |
4 | LH28F640SP |
Sharp Electrionic |
64Mbit (4Mbitx16/8Mbitx8) Page Flash Memory | |
5 | LH28F640SPHT-PTL12 |
Sharp Electrionic |
64Mbit (4Mbitx16/8Mbitx8) Page Flash Memory | |
6 | LH28F002SCH-L |
Sharp Electrionic Components |
2-MBIT(256KBx8) SmartVoltage Flash MEMORY | |
7 | LH28F004SCB-L12 |
Sharp Electrionic Components |
4Mbit Flash Memory | |
8 | LH28F004SCT-L85 |
Sharp Electrionic Components |
4M Flash File Memory | |
9 | LH28F004SU |
Sharp Electrionic Components |
4Mbit(512Kbit x 8/ 256 Kbit x 16) 5V Single Voltage Flash Memory | |
10 | LH28F004SU-LC |
Sharp Electrionic Components |
4M (512K bb 8) Flash Memory | |
11 | LH28F004SU-NC |
Sharp Electrionic Components |
4M (512K bb 8) Flash Memory | |
12 | LH28F004SU-Z1 |
Sharp Electrionic Components |
4M (512K bb 8) Flash Memory |