LH28F004SU-LC - Sharp Electrionic Components

LH28F004SU-LC 4M (512K bb 8) Flash Memory

SYMBOL TYPE NAME AND FUNCTION WORD-SELECT ADDRESSES: Select a word within one 16K block. These addresses are latched during Data Writes. BLOCK-SELECT ADDRESSES: Select 1 of 32 Erase blocks. These addresses are latched during Data Writes, Erase and Lock-Block operations. DATA INPUT/OUTPUT: Inputs data and commands during CUI write cycles. Outputs array, buffe.

Features

40-PIN TSOP 4M (512K × 8) Flash Memory TOP VIEW
• 512K × 8 Word Configuration
• 5 V Write/Erase Operation (5 V VPP, 3.3 V VCC)
  – No Requirement for DC/DC Converter to Write/Erase A16 A15 A14 A13 A12 A11 A9 A8 WE RP VPP RY/BY A18 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 A17 GND NC NC A10 DQ7 DQ6 DQ5 DQ4 VCC VCC NC DQ3 DQ2 DQ1 DQ0 OE GND CE A0
• 120 ns Maximum Access Time (VCC = 3.3 V ± 0.3 V)
• Min. 2.7 V Read Capability
  – 160 ns Maximum Access Time (VCC = 2.7 V)
• 32 Independently Lockable Block.