LH28F020SU-L - Sharp Electrionic Components

LH28F020SU-L 2M (256K bb 8) Flash Memory

SIGNAL TYPE NAME AND FUNCTION BYTE-SELECT ADDRESSES: Select a byte within one 16K block. These addresses are latched during Data Writes. BLOCK-SELECT ADDRESSES: Select 1 of 16 Erase Blocks. These addresses are latched during Data Writes, Erase and Lock-Block operations. DATA INPUT/OUTPUT: Inputs data and commands during CUI write cycles. Outputs array, buffe.

Features

32-PIN TSOP 2M (256K × 8) Flash Memory TOP VIEW
• 256K × 8 Bit Configuration
• 5 V Write/Erase (3.3 V VCC)
• Access Time
  – For 3.3 V Read: 150 ns A11 A9 A8 A13 A14 A17 WE VCC VPP A16 A15 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE DQ7 DQ6 DQ5 DQ4 DQ3 GND DQ2 DQ1 DQ0 A0 A1 A2 A3
• Minimum 2.7 V Read Capability
  – 180 ns Maximum Access Time (VCC = 2.7 V)
• 16 Independently Lockable Blocks (16K Blocks)
• 100,000 Erase Cycles per Block
• Automated Byte Write/Block Erase
  – Command User Interface
  – Status Register
• Syste.