LH28F004SU-Z9 - Sharp Electrionic Components

LH28F004SU-Z9 4M (512 bb 8) Flash Memory

SYMBOL TYPE NAME AND FUNCTION WORD-SELECT ADDRESSES: Select a word within one 16K block. These addresses are latched during Data Writes. BLOCK-SELECT ADDRESSES: Select 1 of 32 Erase blocks. These addresses are latched during Data Writes, Erase and Lock-Block operations. A0 - A13 A14 - A18 INPUT INPUT DATA INPUT/OUTPUT: Inputs data and commands during CUI.

Features

42-PIN CSP 4M (512 × 8) Flash Memory TOP VIEW
• 512K × 8 Word Configuration
• 2.7 V Write/Erase Operation (5 V ± 0.5 V VPP, 3.0 V ± 0.3 V VCC, +15°C to +35°C)
  – No Requirement For DC/DC Converter To Write/Erase 1 A GND B C D E F A17 A10 A14 A16 A15 2 DQ6 DQ7 NC A13 A11 A12 3 VCC DQ4 DQ5 A9 WE A8 4 VCC NC NC NC RP VPP 5 DQ2 NC DQ3 RY/BY A7 A18 6 OE DQ0 DQ1 A6 A4 A5 7 GND CE A0 A3 A1 A2
• 150 ns Maximum Access Time (VCC = 3.3 V ± 0.3 V)
• Minimum 2.7 V Read Capability
  – 190 ns Maximum Access Time (VCC = 2.7 V, -20°C to +85°C)
  – 180 ns Maximum Access Time (VCC = 2.7 V, 0°C to +70°C) .