LE28DW1621T - Sanyo Semicon Device

LE28DW1621T 16 Megabit FlashBank Memory

The LE28DW1621T consists of two memory banks, Bank1 is a 256K x 16 bits or 512K x 8 sector mode flash EEPROM and Bank2 is a 768K x 16 bits or 1536K x 8 sector mode flash EEPROM, manufactured with SANYO's proprietary, high performance FlashTechnology. The LE28DW1621T writes with a 3.0-volt-only power supply. The LE28DW1621T is divided into two separate memory.

Features

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• Single 3.0-Volt Read and Write Operations
• Separate Memory Banks by Address Space
  – Bank1: 4Mbit (256K x 16 / 512K x 8) Flash
  – Bank2: 12Mbit (768K x 16 / 1536K x 8) Flash
  – Simultaneous Read and Write Capability Read Access Time
  – 80 ns Latched Address and Data End of Write Detection
  – Toggle Bit / Data # Polling / RY/BY# Write Protection by WP# pin Erase Verify Mode Flash Bank: Two Small Erase Element Sizes
  – 1K Words per Sector or 32K Words per Block
  – Erase either element before Word Program CMOS I/O Compatibility Packages Available
  – 48-Pin .