LE28C1001T-15 - Sanyo Semicon Device

LE28C1001T-15 1MEG (131072 words x 8 bits) Flash Memory

Ordering number : EN*5129A CMOS LSI LE28C1001M, T-90/12/15 1MEG (131072 words × 8 bits) Flash Memory Preliminary Overview The LE28C1001M, T series ICs are 1 MEG flash memory products that feature a 131072-word × 8-bit organization and 5 V single-voltage power supply operation. CMOS peripheral circuits are adopted for high speed, low power dissipation, and .

Features

• Highly reliable 2-layer polysilicon CMOS flash EEPROM process
• Read and write operations using a 5 V single-voltage power supply
• Fast access time: 90, 120, and 150 ns
• Low power dissipation — Operating current (read): 30 mA (maximum) — Standby current: 20 µA (maximum)
• Highly reliable read/write — Erase/write cycles: 104/103 cycles — Data retention: 10 years
• Address and data latches
• Fast page rewrite operation — 128 bytes per page — Byte/page rewrite time: 5 ms (typical) — Chip rewrite time: 5 s (typical)
• Automatic rewriting using internally generated Vpp
• Rewrite complete detect.