Ordering number : EN*5129A CMOS LSI LE28C1001M, T-90/12/15 1MEG (131072 words × 8 bits) Flash Memory Preliminary Overview The LE28C1001M, T series ICs are 1 MEG flash memory products that feature a 131072-word × 8-bit organization and 5 V single-voltage power supply operation. CMOS peripheral circuits are adopted for high speed, low power dissipation, and .
• Highly reliable 2-layer polysilicon CMOS flash EEPROM process
• Read and write operations using a 5 V single-voltage power supply
• Fast access time: 90, 120, and 150 ns
• Low power dissipation — Operating current (read): 30 mA (maximum) — Standby current: 20 µA (maximum)
• Highly reliable read/write — Erase/write cycles: 104/103 cycles — Data retention: 10 years
• Address and data latches
• Fast page rewrite operation — 128 bytes per page — Byte/page rewrite time: 5 ms (typical) — Chip rewrite time: 5 s (typical)
• Automatic rewriting using internally generated Vpp
• Rewrite complete detect.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | LE28C1001T-12 |
Sanyo Semicon Device |
1MEG (131072 words x 8 bits) Flash Memory | |
2 | LE28C1001T-15 |
Sanyo Semicon Device |
1MEG (131072 words x 8 bits) Flash Memory | |
3 | LE28C1001T |
Sanyo Semicon Device |
1MEG (131072 words x 8 bits) Flash Memory | |
4 | LE28C1001M |
Sanyo Semicon Device |
1MEG (131072 words x 8 bits) Flash Memory | |
5 | LE28CV1001M |
Sanyo Semicon Device |
1MEG (131072 words x 8 bits) Flash Memory | |
6 | LE28CV1001T |
Sanyo Semicon Device |
1MEG (131072 words x 8 bits) Flash Memory | |
7 | LE28CV1001T-12 |
Sanyo Semicon Device |
1MEG (131072 words x 8 bits) Flash Memory | |
8 | LE28CV1001T-15 |
Sanyo Semicon Device |
1MEG (131072 words x 8 bits) Flash Memory | |
9 | LE28DW1621T |
Sanyo Semicon Device |
16 Megabit FlashBank Memory | |
10 | LE28DW1621T-80T |
Sanyo Semicon Device |
16 Megabit FlashBank Memory | |
11 | LE28DW3212AT-80B |
Sanyo |
32 Megabit FlashBank Memory | |
12 | LE28DW8102T |
Sanyo |
8 Megabit FlashBank Memory |