LESHAN RADIO COMPANY, LTD. PNPSURFACEMOUNTTRANSISTOR ƽ We declare that the material of product compliance with RoHS requirements. L2SB882Q L2SB882P DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L2SB882Q 82Q 2500/Tape&Reel L2SB882P 82P 2500/Tape&Reel MAXIMUM RATINGS(Ta=25qC) Parameter Collector-base voltage Collector-emitter volta.
CE(sat) VBE(sat) hFE(1)
− − − − 100
DC current transfer ratio
hFE 32
Transition frequency
fT 50
Typ. − − − − − − − − − − −
Max. − − − 1 10 1 0.5 1.5
320 − −
Unit V V V µA µA µA V V − −
MHz
Conditions IC= 100µA IC= 10mA IE= 100µA VCB= 40V VCB= 30V VEB= 6V IC/IB= 2A/ 0.2A IC/IB= 2A/ 0.2A VCE= 2V, IC= 1A VCE= 2V, IC= 100mA VCE= 5V, I E=0.1A, f =10MHz
hFE(1) values are classified as follows :
Item(
*)
Q
hFE 100~200
P 160~320
Rev.O 1/2
LESHAN RADIO COMPANY, LTD. L2SB882Q L2SB882P
SOT-89
D1 R0.200
E
B1 8° (4X)
B
e
L A
D
C H
Unit: mm
SOT89-3L Dim Min Max Typ
A 1.40 1.60 1.50 B.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | L2SB882Q |
Leshan Radio Company |
PNP SURFACE MOUNT TRANSISTOR | |
2 | L2SB1197KQLT1 |
Leshan Radio Company |
Low Frequency Transistor PNP Silicon | |
3 | L2SB1197KQLT1G |
Leshan Radio Company |
Low Frequency Transistor PNP Silicon | |
4 | L2SB1197KQLT3G |
Leshan Radio Company |
Low Frequency Transistor | |
5 | L2SB1197KRLT1 |
Leshan Radio Company |
Low Frequency Transistor PNP Silicon | |
6 | L2SB1197KRLT1G |
Leshan Radio Company |
Low Frequency Transistor PNP Silicon | |
7 | L2SB1197KRLT3G |
Leshan Radio Company |
Low Frequency Transistor | |
8 | L2SB772P |
Leshan Radio Company |
PNP SURFACE MOUNT TRANSISTOR | |
9 | L2SB772Q |
Leshan Radio Company |
PNP SURFACE MOUNT TRANSISTOR | |
10 | L2SA1036KPLT1 |
Leshan Radio Company |
Medium Power Transistor | |
11 | L2SA1036KQLT1 |
Leshan Radio Company |
Medium Power Transistor | |
12 | L2SA1036KQLT1G |
Leshan Radio Company |
Medium Power Transistor |