L2SB1197KRLT1G - Leshan Radio Company

L2SB1197KRLT1G Low Frequency Transistor PNP Silicon

LESHAN RADIO COMPANY, LTD. Low Frequency Transistor PNP Silicon L2SB1197K*LT1 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. www.DataSheet4U.com ƽEpitaxial planar type. ƽNPN complement: L2SD1781K ƽPb-Free Package is available. 3 1 2 SOT– 23 (TO–236AB) DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L2SB1197KQLT1 L2SB1.

Features

toff current ICBO − Emitter cutoff current IEBO − Collector-emitter saturation voltage VCE(sat) − DC current transfer ratio hFE 120 Transition frequency fT − Output capacitance Cob − Typ. Max. Unit −−V −−V −−V − −0.5 µA − −0.5 µA − −0.5 V − 390 − 200 − MHz 12 30 pF hFE values are classified as follows : Item(
*) Q R hFE 120~270 180~390 1 BASE 3 COLLECTOR 2 EMITTER Conditions IC= −50µA IC= −1mA IE= −50µA VCB= −20V VEB= −4V IC/IB= −0.5A/ −50mA VCE= −3V, IC= −100mA VCE= −5V, IE=50mA, f=100MHz VCB= −10V, IE=0A, f=1MHz L2SB1197KLT1-1/3 www.DataSheet4U.com LESHAN RAD.