LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series PNP Silicon S-L2SB1197KQ LT1G Series FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 3 ƽEpitaxial planar type. ƽNPN complement: L2SD1781K 1 ƽWe declare that the material of product compliance with RoHS requirements. ƽS- Prefix for Automotive and Other Applicatio.
−0.8 0.2 150 −55 to 150
Unit V V V A W °C °C
ELECTRICAL CHARACTERISTICS(Ta=25qC)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO −40
Collector-emitter breakdown voltage BVCEO −32
Emitter-base breakdown voltage
BVEBO −5
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
DC current transfer ratio
hFE 120
Transition frequency
fT −
Output capacitance
Cob −
Typ. Max. Unit
−−V
−−V
−−V
− −0.5 µA
− −0.5 µA
− −0.5
V
− 390 −
200 − MHz
12 30 pF
hFE values are classified as follows :
Item(
*)
Q
R
hF.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | L2SB1197KRLT1 |
Leshan Radio Company |
Low Frequency Transistor PNP Silicon | |
2 | L2SB1197KRLT1G |
Leshan Radio Company |
Low Frequency Transistor PNP Silicon | |
3 | L2SB1197KQLT1 |
Leshan Radio Company |
Low Frequency Transistor PNP Silicon | |
4 | L2SB1197KQLT1G |
Leshan Radio Company |
Low Frequency Transistor PNP Silicon | |
5 | L2SB1197KQLT3G |
Leshan Radio Company |
Low Frequency Transistor | |
6 | L2SB772P |
Leshan Radio Company |
PNP SURFACE MOUNT TRANSISTOR | |
7 | L2SB772Q |
Leshan Radio Company |
PNP SURFACE MOUNT TRANSISTOR | |
8 | L2SB882P |
Leshan Radio Company |
PNP SURFACE MOUNT TRANSISTOR | |
9 | L2SB882Q |
Leshan Radio Company |
PNP SURFACE MOUNT TRANSISTOR | |
10 | L2SA1036KPLT1 |
Leshan Radio Company |
Medium Power Transistor | |
11 | L2SA1036KQLT1 |
Leshan Radio Company |
Medium Power Transistor | |
12 | L2SA1036KQLT1G |
Leshan Radio Company |
Medium Power Transistor |