SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEAUTRES ᴌExcellent hFE Linearity : hFE(2)=25(Min.) at VCE=-6V, IC=-400mA. ᴌComplementary to KTC200. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation.
E(2) VCE(sat) VBE fT Collector Output Capacitance Cob Note : hFE(1) Classification O:70ᴕ140 , Y:120ᴕ240 TEST CONDITION VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-50mA VCE=-6V, IC=-400mA IC=-100mA, IB=-10mA VCE=-1V, IC=-100mA VCE=-6V, IC=-20mA VCB=-6V, IE=0, f=1MHz MIN. 70 25 - TYP. - -0.1 -0.8 200 13 MAX. -0.1 -0.1 240 -0.25 -1.0 - UNIT ỌA ỌA V V MHz pF 1994. 3. 23 Revision No : 0 1/2 COLLECTOR CURRENT I C (mA) KTA200 -600 -500 -400 -8mA I C - VCE -7mA -6mA -5mA -300 COMMON EMITTER Ta=25 C -4mA -3mA -200 -100 0 0 -2mA I B=-1mA 0mA -1 -2 -3 -4 -5 COLLECTOR-EMITTER VOLTAGE V.
TO-92 PNP 。Silicon PNP transistor in a TO-92 Plastic Package. / Features , KTC200 。 Excellent hFE linearity, comple.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KTA2012E |
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR | |
2 | KTA2012V |
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR | |
3 | KTA2014 |
GME |
PNP Silicon Epitaxial Planar Transistor | |
4 | KTA2014 |
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR | |
5 | KTA2014 |
SeCoS |
PNP Transistor | |
6 | KTA2014E |
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR | |
7 | KTA2014F |
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR | |
8 | KTA2014V |
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR | |
9 | KTA2015 |
WEJ |
PNP Transistor | |
10 | KTA2015 |
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR | |
11 | KTA2015 |
WEITRON |
PNP General Purpose Transistors | |
12 | KTA2015 |
Jin Yu Semiconductor |
PNP Transistor |