KTA2014V - KEC

KTA2014V EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). Low Noise : NF=1dB(Typ.), 10dB(Max.). Complementary to KTC4075V. Very Small Package. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collect.

Features

Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). Low Noise : NF=1dB(Typ.), 10dB(Max.). Complementary to KTC4075V. Very Small Package. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IB PC Tj Storage Temperature Range Tstg RATING -50 -50 -5 -150 -30 100 150 -55 150 UNIT V V V mA mA mW A G H KTA2014V EPITAXIAL PLANAR PNP TRANSISTOR K JD E B 2 DIM MILLIMETERS A 1.2 +_0.05 B 0.8 +_0.05 1 3 C 0.5 +_ 0.05 D 0.3 +.