KTA2012E - KEC

KTA2012E EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. FEATURES ᴌA Collector Current is Large. ᴌCollector Saturation Voltage is low. : VCE(sat)ᴪ-250mV at IC=-200mA/IB=-10mA. ᴌComplementary to KTC4072E. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junct.

Features

ᴌA Collector Current is Large. ᴌCollector Saturation Voltage is low. : VCE(sat)ᴪ-250mV at IC=-200mA/IB=-10mA. ᴌComplementary to KTC4072E. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
* Single pulse Pw=1mS. SYMBOL VCBO VCEO VEBO IC ICP
* PC Tj Tstg RATING -15 -12 -6 -500 -1 100 150 -55ᴕ150 UNIT V V V mA A mW ᴱ ᴱ A G H KTA2012E EPITAXIAL PLANAR PNP TRANSISTOR C E B DIM MILLIMETERS 2 D A 1.60+_ 0.10 B 0.85+_ 0.10 13 C 0.70+_ 0..