KSH127 - INCHANGE

KSH127 PNP Transistor

·High DC current gain ·Built-in a damper diode at E-C ·Electrically similar to popular TIP127 ·DPAK for surface mount applications ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and .

Features

CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1
* Collector-Emitter Saturation Voltage IC= -4A; IB= -16mA VCE(sat)-2
* Collector-Emitter Saturation Voltage IC= -8A; IB= -80mA VBE(sat)
* Base-Emitter Saturation Voltage IC=-8A; IB= -80mA VBE(on)
* Base-Emitter On Voltage IC= -4A; VCE= -4V V(BR)CEO Collector-Emitter Breakdown Voltage IC=-30mA; IB= 0 ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1
* DC Current Gain IC= -4A; VCE= -4V hFE-2
* DC Current Gain IC= -8A; VCE= -4V COB Output Capac.