KSH112 INCHANGE NPN Transistor Datasheet, en stock, prix

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KSH112

INCHANGE
KSH112
KSH112 KSH112
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Part Number KSH112
Manufacturer INCHANGE
Description ·High DC current gain ·Built-in a damper diode at E-C ·Electrically similar to popular TIP112 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation...
Features tter Saturation Voltage IC= 2A; IB= 8mA VCE(sat)-2* Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA VBE(sat)* Base-Emitter Saturation Voltage IC= 4A; IB= 40mA VBE(on)* Base-Emitter On Voltage IC= 2A; VCE= 3V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 ICBO Collector Cutoff Current VCB= 50V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1* DC Current Gain IC= 0.5A; VCE= 3V hFE-2* DC Current Gain IC= 2A; VCE= 3V hFE-3* DC Current Gain IC= 4A; VCE=3V COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz fT Current-Gain—Bandwidth Product *:Pulse...

Document Datasheet KSH112 Data Sheet
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