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·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6V IC Collector Current- Contin.
ent VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 hFE DC Current Gain IC= 0.5A ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V tf Fall Time IC= 2A , IB1= 0.6A ; IB2= -1.2A RL= 100Ω; VCC= 200V MIN TYP. MAX UNIT 8.0 V 1.5 V 10 μA 1 mA 8 3 MHz 0.4 μs isc website：www.iscsemi.cn 2 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | KSD5010 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | KSD5011 |
Samsung semiconductor |
NPN Transistor |
|
| 3 | KSD5011 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | KSD5012 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 5 | KSD5013 |
Samsung semiconductor |
NPN Transistor |
|
| 6 | KSD5013 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 7 | KSD5015 |
Samsung semiconductor |
NPN Transistor |
|
| 8 | KSD5015 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 9 | KSD5016 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 10 | KSD5017 |
Samsung semiconductor |
NPN Transistor |
|
| 11 | KSD5018 |
Fairchild Semiconductor |
NPN Transistor |
|
| 12 | KSD5000 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|