.
.
·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATION.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KSD5010 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
2 | KSD5012 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
3 | KSD5013 |
Samsung semiconductor |
NPN Transistor | |
4 | KSD5013 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
5 | KSD5014 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
6 | KSD5015 |
Samsung semiconductor |
NPN Transistor | |
7 | KSD5015 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
8 | KSD5016 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
9 | KSD5017 |
Samsung semiconductor |
NPN Transistor | |
10 | KSD5018 |
Fairchild Semiconductor |
NPN Transistor | |
11 | KSD5000 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
12 | KSD5001 |
Inchange Semiconductor |
Silicon NPN Power Transistor |