KSD227 - Fairchild Semiconductor

KSD227 Low Frequency Power Amplifier

KSD227 KSD227 Low Frequency Power Amplifier • Complement to KSA642 • Collector Power Dissipation : PC=400mW 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Co.

Features

s V V V µA µA hFE Classification Classification hFE O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400 ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSD227 Typical Characteristics 50 45 IB = 450µA IB = 400µA 1000 VCE = 1V IC[mA], COLLECTOR CURRENT 40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 IB = 300µA IB = 250µA IB = 200µA IB = 150µA IB = 100µA IB = 50µA 6 7 8 9 10 hFE, DC CURRENT GAIN IB = 350µA 100 10 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAG.