KSD2058 - Fairchild Semiconductor

KSD2058 Low Frequency Power Amplifier

KSD2058 KSD2058 Low Frequency Power Amplifier 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (Ta=25.

Features

, IC = 0.5A VCE = 5V, IC = 0.5A VCB = 10V, f = 1MHz VCC = 30V, IC = 2A IB1 = - IB2 = 0.2A RL = 15Ω 35 0.65 1.3 0.65 3 0.4 60 8 1.5 V V MHz pF µs µs µs Min. Typ. Max. 10 1 Units µA mA V hFE Classification Classification hFE O 60 ~ 120 Y 100 ~ 200 G 150 ~ 300 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD2058 Typical Characteristics 3.0 IB = 90mA IB = 80mA IB = 70m A 1000 IB = 60mA IB = 50mA IB = 40mA IB = 30mA IB = 20mA VCE = 5V Ic[A], COLLECTOR CURRENT 2.5 2.0 1.5 hFE, DC CURRENT GAIN 100 1.0 IB = 10mA 0.5 IB = 0mA 0.0 0 1 2 3 4 5 6 10 0.01 0.1 1 1.