KSC1173 — NPN Epitaxial Silicon Transistor KSC1173 NPN Epitaxial Silicon Transistor Features • Low Frequency Power Amplifier, Power Regulator • Collector Current : IC=3A • Collector Dissipation : PC=10W (TC=25°C) • Complement to KSA473 August 2009 1 TO-220 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol .
• Low Frequency Power Amplifier, Power Regulator
• Collector Current : IC=3A
• Collector Dissipation : PC=10W (TC=25°C)
• Complement to KSA473
August 2009
1
TO-220
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings
* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
BVCBO
Collector-Base Voltage
30
V
BVCEO
Collector-Emitter Voltage
30
V
BVEBO
Emitter-Base Voltage
5
V
IC
Collector Current
3
A
PC
Collector Dissipation (TC=25°C)
10
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 to +150
°C
* These ratings are limiting values above .
·Low Collector Saturation Voltage ·Complement to Type KSA473 ·100% avalanche tested ·Minimum Lot-to-Lot variations for r.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KSC1187 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor | |
2 | KSC1187 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
3 | KSC1188 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor | |
4 | KSC1008 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor | |
5 | KSC1008 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
6 | KSC1008 |
LZG |
SILICON NPN TRANSISTOR | |
7 | KSC1008 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
8 | KSC1009 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor | |
9 | KSC1009 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
10 | KSC1070 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor | |
11 | KSC1072 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor | |
12 | KSC1098 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor |