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KSC1173 |
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| Part Number | KSC1173 |
| Manufacturer | INCHANGE |
| Description | ·Low Collector Saturation Voltage ·Complement to Type KSA473 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier a... |
| Features |
BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
30
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.5mA ; IE= 0
30
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ; IC= 0
5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
0.8
V
VBE(on) Base-Emitter On Voltage
IC= 0.5A ; VCE= 2V
1.0
V
ICBO
Collector Cutoff Current
VCB= 20V ; IE= 0
1.0 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1.0 μA
hFE-1
DC Current Gain
IC= 0.5A ; VCE= 2V
70
240
hFE-2
DC Current Gain
IC= 2.5A ; VCE= 2V
25
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 2V... |
| Document |
 KSC1173 Data Sheet
PDF 195.88KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | KSC1173 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 2 | KSC1187 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 3 | KSC1187 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 4 | KSC1188 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 5 | KSC1008 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor |
|