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KSC1173 |
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| Part Number | KSC1173 |
| Manufacturer | Fairchild Semiconductor |
| Description | KSC1173 — NPN Epitaxial Silicon Transistor KSC1173 NPN Epitaxial Silicon Transistor Features • Low Frequency Power Amplifier, Power Regulator • Collector Current : IC=3A • Collector Dissipation : PC=... |
| Features |
• Low Frequency Power Amplifier, Power Regulator • Collector Current : IC=3A • Collector Dissipation : PC=10W (TC=25°C) • Complement to KSA473 August 2009 1 TO-220 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol Parameter Value Units BVCBO Collector-Base Voltage 30 V BVCEO Collector-Emitter Voltage 30 V BVEBO Emitter-Base Voltage 5 V IC Collector Current 3 A PC Collector Dissipation (TC=25°C) 10 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to +150 °C * These ratings are limiting values above ... |
| Document |
 KSC1173 Data Sheet
PDF 245.10KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | KSC1173 |
INCHANGE |
NPN Transistor |
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| 2 | KSC1187 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor |
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| 3 | KSC1187 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 4 | KSC1188 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor |
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| 5 | KSC1008 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor |
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