The Samsung KMM5322104CKU is a 2Mx32bits RAM high density memory module. The Dynamic Samsung FEATURES • Part Identification - KMM5322104CKU(2048 cycles/32ms Ref, SOJ, Solder) - KMM5322104CKUG(2048 cycles/32ms Ref, SOJ, Gold) • Fast Page Mode with Extended Data Out • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability • TTL compatible .
• Part Identification - KMM5322104CKU(2048 cycles/32ms Ref, SOJ, Solder) - KMM5322104CKUG(2048 cycles/32ms Ref, SOJ, Gold)
• Fast Page Mode with Extended Data Out
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• TTL compatible inputs and outputs
• Single +5V±10% power supply
• JEDEC standard PDPin & pinout
• PCB : Height(1000mil), single sided component
KMM5322104CKU consists of four CMOS 2Mx8bits DRAMs in 28-pin SOJ package mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The K.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KMM5322200C2W |
Samsung Semiconductor |
2MBx32 DRAM Simm Using 1MBx16 | |
2 | KMM5322204C2W |
Samsung Semiconductor |
2MBx32 DRAM Simm Using 1MBx16 | |
3 | KMM5321200C2W |
Samsung Semiconductor |
1M x 32 DRAM SIMM | |
4 | KMM5321204C2W |
Samsung Semiconductor |
1M x 32 DRAM SIMM | |
5 | KMM53216000BK |
Samsung Semiconductor |
16MBx32 DRAM Simm Using 16MBx4 | |
6 | KMM53216000CK |
Samsung Semiconductor |
16MBx32 DRAM Simm Using 16MBx4 | |
7 | KMM53216004BK |
Samsung Semiconductor |
16MBx32 DRAM Simm Using 16MBx4 | |
8 | KMM53216004CK |
Samsung Semiconductor |
16MBx32 DRAM Simm Using 16MBx4 | |
9 | KMM53232000BK |
Samsung Semiconductor |
32MB X 32 DRAM Simm Using 16MBx4 | |
10 | KMM53232000CK |
Samsung Semiconductor |
32MBx32 DRAM Simm Using 16MBx4 | |
11 | KMM53232004BK |
Samsung Semiconductor |
32MBx32 DRAM Simm Using 16MBx4 | |
12 | KMM53232004CK |
Samsung Semiconductor |
32MBx32 DRAM Simm Using 16MBx4 |