KMM5321200C2W 1M x 32 DRAM SIMM Datasheet

KMM5321200C2W 1M x 32 DRAM SIMM

The Samsung KMM5321200C2W is a 1Mx32bits Dynamic RAM high density memory module. The Samsung KMM5321200C2W consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM5321200C2W is a Single In-line Memory Module with e.

Features

• Part Identification - KMM5321200C2W(1024 cycles/16ms Ref, SOJ, Solder) - KMM5321200C2WG(1024 cycles/16ms Ref, SOJ, Gold)
• Fast Page Mode Operation
• CAS-before-RAS refresh capability
• RAS-only refresh capability
• TTL compatible inputs and outputs
• Single +5V ±10% power supply
• JEDEC standard PDPin & pinout
• PCB : Height(750mil), single sided component PERFORMANCE RANGE Speed -5 -6 tRAC 50ns 60ns tCAC 15ns 15ns tRC 90ns 110ns PIN CONFIGURATIONS Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Symbol VSS DQ0 DQ16 DQ1 DQ17 DQ2 DQ1.

No.	Partie #	Fabricant	Description
1	KMM5321204C2W	Samsung Semiconductor	1M x 32 DRAM SIMM
2	KMM53216000BK	Samsung Semiconductor	16MBx32 DRAM Simm Using 16MBx4
3	KMM53216000CK	Samsung Semiconductor	16MBx32 DRAM Simm Using 16MBx4
4	KMM53216004BK	Samsung Semiconductor	16MBx32 DRAM Simm Using 16MBx4
5	KMM53216004CK	Samsung Semiconductor	16MBx32 DRAM Simm Using 16MBx4
6	KMM5322104CKU	Samsung Semiconductor	2MB X 32 DRAM Simm Using 2MB X 8
7	KMM5322200C2W	Samsung Semiconductor	2MBx32 DRAM Simm Using 1MBx16
8	KMM5322204C2W	Samsung Semiconductor	2MBx32 DRAM Simm Using 1MBx16
9	KMM53232000BK	Samsung Semiconductor	32MB X 32 DRAM Simm Using 16MBx4
10	KMM53232000CK	Samsung Semiconductor	32MBx32 DRAM Simm Using 16MBx4
11	KMM53232004BK	Samsung Semiconductor	32MBx32 DRAM Simm Using 16MBx4
12	KMM53232004CK	Samsung Semiconductor	32MBx32 DRAM Simm Using 16MBx4

KMM5321200C2W - Samsung Semiconductor

KMM5321200C2W 1M x 32 DRAM SIMM

Features

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