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The Samsung KMM53216000B is a 16Mx32bits Dynamic RAM high density memory module. The Samsung KMM53216000B consists of eight CMOS 16Mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM53216000B is a Single In-line Memory Module with edge con.
• Part Identification - KMM53216000BK(4K cycles/64ms Ref, SOJ, Solder) - KMM53216000BKG(4K cycles/64ms Ref, SOJ, Gold)
• Fast Page Mode Operation
• CAS-before-RAS & Hidden Refresh capability
• RAS-only refresh capability
• TTL compatible inputs and outputs
• Single +5V±10% power supply
• JEDEC standard PDpin & pinout
• PCB : Height(1250mil), double sided component
PERFORMANCE RANGE
Speed -5 -6
tRAC
50ns 60ns
tCAC
13ns 15ns
tRC
90ns 110ns
tPC
35ns 40ns
PIN CONFIGURATIONS
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Symbol VSS DQ0 D.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | KMM53216000CK |
Samsung Semiconductor |
16MBx32 DRAM Simm Using 16MBx4 |
|
| 2 | KMM53216004BK |
Samsung Semiconductor |
16MBx32 DRAM Simm Using 16MBx4 |
|
| 3 | KMM53216004CK |
Samsung Semiconductor |
16MBx32 DRAM Simm Using 16MBx4 |
|
| 4 | KMM5321200C2W |
Samsung Semiconductor |
1M x 32 DRAM SIMM |
|
| 5 | KMM5321204C2W |
Samsung Semiconductor |
1M x 32 DRAM SIMM |
|
| 6 | KMM5322104CKU |
Samsung Semiconductor |
2MB X 32 DRAM Simm Using 2MB X 8 |
|
| 7 | KMM5322200C2W |
Samsung Semiconductor |
2MBx32 DRAM Simm Using 1MBx16 |
|
| 8 | KMM5322204C2W |
Samsung Semiconductor |
2MBx32 DRAM Simm Using 1MBx16 |
|
| 9 | KMM53232000BK |
Samsung Semiconductor |
32MB X 32 DRAM Simm Using 16MBx4 |
|
| 10 | KMM53232000CK |
Samsung Semiconductor |
32MBx32 DRAM Simm Using 16MBx4 |
|
| 11 | KMM53232004BK |
Samsung Semiconductor |
32MBx32 DRAM Simm Using 16MBx4 |
|
| 12 | KMM53232004CK |
Samsung Semiconductor |
32MBx32 DRAM Simm Using 16MBx4 |
|