KMA3D6N20SA - KEC

KMA3D6N20SA N-Channel MOSFET

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment. FEATURES VDSS=20V, ID=3.6A Drain-Source ON Resistance RDS(ON)=45m (Max.) @ VGS=4.5V RDS(ON)=65m (Max.) @ VGS=2.5V Super Hige Dense Cell Design KMA3D6N20SA N-Ch T.

Features

VDSS=20V, ID=3.6A Drain-Source ON Resistance RDS(ON)=45m (Max.) @ VGS=4.5V RDS(ON)=65m (Max.) @ VGS=2.5V Super Hige Dense Cell Design KMA3D6N20SA N-Ch Trench MOSFET E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current DC Pulsed Drain-Source-Diode Forward Current Drain Power Dissipation TA=25 TA=70 Maximu.