www.DataSheet4U.com KMA010P20Q P-Ch Trench MOSFET It s mainly suitable for battery pack or power management in cell phone, and PDA. FEATURES VDSS=-20V, ID=-10A. Drain-Source ON Resistance. : RDS(ON)=14m (Max.) @ VGS=-4.5V, ID=-10A. : RDS(ON)=24m (Max.) @ VGS=-2.5V, ID=-7.6A. A D P G H T L 8 5 B1 B2 1 4 DIM A B1 B2 D G H L P T MILLIMETERS _ 0.2 4.85 +.
VDSS=-20V, ID=-10A. Drain-Source ON Resistance. : RDS(ON)=14m (Max.) @ VGS=-4.5V, ID=-10A. : RDS(ON)=24m (Max.) @ VGS=-2.5V, ID=-7.6A.
A D P G H T L
8
5 B1 B2
1
4
DIM A B1 B2 D G H L P T
MILLIMETERS _ 0.2 4.85 + _ 0.2 3.94 + _ 0.3 6.02 + _ 0.1 0.4 + 0.15+0.1/-0.05 _ 0.2 1.63 + _ 0.2 0.65 + 1.27 0.20+0.1/-0.05
MAXIMUM RATING (Ta=25
CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage DC Drain Current
)
SYMBOL VDSS VGSS ID
* IDP
* IS
* PD
* Tj Tstg RthJA
* RATING -20 12 10 48 -2.3 1.6 W 0.625 150 -55 150 80 /W A UNIT V V A
FLP-8
Pulsed (Note1) Source-Drain Diode Current Drain Power D.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KMA010-xxx |
Advanced Interconnections |
Board to Board Interconnecttions | |
2 | KMA1117 |
Guangdong Kexin Industrial |
1A Low Dropout Positive Adjustable | |
3 | KMA199 |
NXP |
Programmable angle sensor | |
4 | KMA199E |
NXP Semiconductors |
Programmable angle sensor | |
5 | KMA200 |
NXP |
Programmable angle sensor | |
6 | KMA210 |
NXP |
Programmable angle sensor | |
7 | KMA220 |
NXP |
Dual channel programmable angle sensor | |
8 | KMA221 |
NXP |
Programmable angle sensor | |
9 | KMA2D0DP20X |
KEC |
TSOP-6 PACKAGE | |
10 | KMA2D3P20S |
KEC |
P-Ch Trench MOSFET | |
11 | KMA2D4P20S |
KEC |
P-Ch Trench MOSFET | |
12 | KMA2D4P20SA |
KEC |
P-Channel MOSFET |