KMA2D4P20SA - KEC

KMA2D4P20SA P-Channel MOSFET

It s mainly suitable for use as a load switch in battery powered applications. KMA2D4P20SA P-Ch Trench MOSFET FEATURES VDSS=-20V, ID=-2.4A. Drain to Source on-state Resistance. : RDS(ON)=100m (Max.) @ VGS=-4.5V. : RDS(ON)=175m (Max.) @ VGS=-2.5V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Drain to Source Voltage VDSS -20 V Gate to So.

Features

VDSS=-20V, ID=-2.4A. Drain to Source on-state Resistance. : RDS(ON)=100m (Max.) @ VGS=-4.5V. : RDS(ON)=175m (Max.) @ VGS=-2.5V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Drain to Source Voltage VDSS -20 V Gate to Source Voltage VGSS 12 V Drain Current DC@Ta=25 (Note1) ID -2.4 A Pulsed (Note1) IDP -9 Ta=25 Drain Power Dissipation Ta=100 (Note1) (Note1) 1.25 PD W 0.6 Maximum Junction Temperature Storage Temperature Range Tj 150 Tstg -55 150 Thermal Resistance, Junction to Ambient (Note1) RthJA Note1)Surface Mounted on 1 1 FR4 Board, t 5sec. 100 /W E L BL.