The KM736V795 is a 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 128K words of 36bits and integrates address and control registers, a 2-bit burst address counter and added some new functions for high performance cache RAM applications; GW, BW, LB.
• Synchronous Operation.
• 2 Stage Pipelined operation with 4 Burst.
• On-Chip Address Counter.
• Self-Timed Write Cycle.
• On-Chip Address and Control Registers.
• VDD= 3.3V+0.3V/-0.165V Power Supply.
• I/O Supply Voltage 2.5V+0.4V/-0.13V.
• 5V Tolerant Inputs Except I/O Pins.
• Byte Writable Function.
• Global Write Enable Controls a full bus-width write.
• Power Down State via ZZ Signal.
• LBO Pin allows a choice of either a interleaved burst or a linear burst.
• Three Chip Enables for simple depth expansion with No Data Contention ; 2cycle Enable, 1cycle Disable.
• Asynchronous Output Enab.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KM736V790 |
Samsung Semiconductor |
128Kx36 Synchronous SRAM | |
2 | KM736V799 |
Samsung Semiconductor |
128Kx36 Synchronous SRAM | |
3 | KM736V747 |
Samsung Semiconductor |
(KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM | |
4 | KM736V749 |
Samsung Semiconductor |
(KM736V749 / KM718V849) 128Kx36 & 256Kx18 Pipelined NtRAM | |
5 | KM736V787 |
Samsung Semiconductor |
128Kx36 Synchronous SRAM | |
6 | KM736V789 |
Samsung Semiconductor |
128Kx36 Synchronous SRAM | |
7 | KM736V687 |
Samsung Semiconductor |
64Kx36-Bit Synchronous Burst SRAM | |
8 | KM736V687A |
Samsung Semiconductor |
64Kx36-Bit Synchronous Burst SRAM | |
9 | KM736V689 |
Samsung Semiconductor |
64Kx36-Bit Synchronous Pipelined Burst SRAM | |
10 | KM736V689A |
Samsung Semiconductor |
64Kx36-Bit Synchronous Pipelined Burst SRAM | |
11 | KM736V887 |
Samsung semiconductor |
(KM736V887 / KM718V987) 256Kx36 & 512Kx18 Synchronous SRAM | |
12 | KM736V989 |
Samsung semiconductor |
512Kx36 & 1Mx18 Synchronous SRAM |