The KM736V687A is 2,359,296 bits Synchronous Static Random Access Memory designed to support zero wait state performance for advanced Pentium/Power PC based system. And with CS1 high, ADSP is blocked to control signals. It can be organized as 64K words of 36 bits. And it integrates address and control registers, a 2-bit burst address counter and high output .
• Synchronous Operation.
• On-Chip Address Counter.
• Write Self-Timed Cycle.
• On-Chip Address and Control Registers.
• VDD= 3.3V+0.3V/-0.165V Power Supply.
• VDDQ Supply Voltage 3.3V+0.3V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
• 5V Tolerant Inputs except I/O Pins.
• Byte Writable Function.
• Global Write Enable Controls a full bus-width write.
• Power Down State via ZZ Signal.
• Asynchronous Output Enable Control.
• ADSP, ADSC, ADV Burst Control Pins.
• LBO Pin allows a choice of either a interleaved burst or a linear burst.
• Three Chip Enables for simple depth expansion wi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KM736V687 |
Samsung Semiconductor |
64Kx36-Bit Synchronous Burst SRAM | |
2 | KM736V689 |
Samsung Semiconductor |
64Kx36-Bit Synchronous Pipelined Burst SRAM | |
3 | KM736V689A |
Samsung Semiconductor |
64Kx36-Bit Synchronous Pipelined Burst SRAM | |
4 | KM736V747 |
Samsung Semiconductor |
(KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM | |
5 | KM736V749 |
Samsung Semiconductor |
(KM736V749 / KM718V849) 128Kx36 & 256Kx18 Pipelined NtRAM | |
6 | KM736V787 |
Samsung Semiconductor |
128Kx36 Synchronous SRAM | |
7 | KM736V789 |
Samsung Semiconductor |
128Kx36 Synchronous SRAM | |
8 | KM736V790 |
Samsung Semiconductor |
128Kx36 Synchronous SRAM | |
9 | KM736V795 |
Samsung Semiconductor |
128Kx36 Synchronous SRAM | |
10 | KM736V799 |
Samsung Semiconductor |
128Kx36 Synchronous SRAM | |
11 | KM736V887 |
Samsung semiconductor |
(KM736V887 / KM718V987) 256Kx36 & 512Kx18 Synchronous SRAM | |
12 | KM736V989 |
Samsung semiconductor |
512Kx36 & 1Mx18 Synchronous SRAM |