KM736V749 - Samsung Semiconductor

KM736V749 (KM736V749 / KM718V849) 128Kx36 & 256Kx18 Pipelined NtRAM

The KM736V749 and KM718V849 are 4,718,592 bits Synchronous Static SRAMs. The NtRAMTM, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied "High or Low".

Features

• 3.3V+0.165V/-0.165V Power Supply.
• I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
• Byte Writable Function.
• Enable clock and suspend operation.
• Single READ/WRITE control pin.
• Self-Timed Write Cycle.
• Three Chip Enable for simple depth expansion with no data contention
• Α interleaved burst or a linear burst mode.
• Asynchronous output enable control.
• Power Down mode.
• TTL-Level Three-State Outputs.
• 100-TQFP-1420A Package. GENERAL DESCRIPTION The KM736V749 and KM718V849 are 4,718,592 bits Synchronous Static SRAMs. The NtRAMTM, or No Turnar.