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The KM68V257E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The KM68V257E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advanced CMOS process and designed for high-speed circuit technology. .
• Fast Access Time 12,15,20ns(Max.)
• Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 2.0mA(Max.) 0.5mA(Max.) L-ver. only Operating KM68V257E - 12 : 70mA(Max.) KM68V257E - 15 : 70mA(Max.) KM68V257E - 20 : 70mA(Max.)
• Single 3.3 ±0.3V Power Supply
• TTL Compatible Inputs and Outputs
• Fully Static Operation - No Clock or Refresh required
• Three State Outputs
• Standard Pin Configuration KM68V257EJ : 28-SOJ-300 KM68V257ETG : 28-TSOP1-0813, 4F
CMOS SRAM
GENERAL DESCRIPTION
The KM68V257E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | KM68V257C |
Samsung Semiconductor |
32K X 8 Bit High Speed CMOS Static RAM |
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| 2 | KM68V1000B |
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(KM68V1000B / KM68U1000B) 128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
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| 3 | KM681000B |
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128K x 8-bit Low Power CMOS Static RAM |
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| 4 | KM681000C |
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| 5 | KM681000E |
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| 6 | KM681001A |
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| 7 | KM681001A |
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128K x 8 Bit High-Speed CMOS Static RAM |
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| 8 | KM681001B |
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| 9 | KM681002A |
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| 10 | KM681002AI |
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| 11 | KM681002B |
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| 12 | KM681002BI |
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