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The KM681000B family is fabricated by SAMSUNG's advanced CMOS process technology. The family can support various operating temperature ranges and have various package types for user flexibility of system design. The family also support low data retention voltage for battery back-up operation with low data retention current. ¡Ü ¡Ü ¡Ü ¡Ü Process Technolog.
¡Ü ¡Ü PRELIMINARY CMOS SRAM GENERAL DESCRIPTION The KM681000B family is fabricated by SAMSUNG's advanced CMOS process technology. The family can support various operating temperature ranges and have various package types for user flexibility of system design. The family also support low data retention voltage for battery back-up operation with low data retention current. ¡Ü ¡Ü ¡Ü ¡Ü Process Technology : 0.6§- CMOS Organization : 128Kx8 Power Supply Voltage : Single 5.0V ¡¾ 10% Low Data Retention Voltage : 2V(Min) Three state output and TTL Compatible Package Type : JEDEC Standard 32-DIP,.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | KM681000C |
Samsung semiconductor |
128K x8 bit Low Power CMOS Static RAM |
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| 2 | KM681000E |
Samsung semiconductor |
128Kx8 bit Low Power CMOS Static RAM |
|
| 3 | KM681001A |
Samsung semiconductor |
128K x 8 Bit High-Speed CMOS Static RAM |
|
| 4 | KM681001A |
Samsung semiconductor |
128K x 8 Bit High-Speed CMOS Static RAM |
|
| 5 | KM681001B |
Samsung semiconductor |
128K x 8 Bit High-Speed CMOS Static RAM |
|
| 6 | KM681002A |
Samsung semiconductor |
128Kx8 High Speed Static RAM |
|
| 7 | KM681002AI |
Samsung semiconductor |
128Kx8 High Speed Static RAM |
|
| 8 | KM681002B |
Samsung semiconductor |
128Kx8 Bit High Speed Static RAM |
|
| 9 | KM681002BI |
Samsung semiconductor |
128Kx8 Bit High Speed Static RAM |
|
| 10 | KM681002C |
Samsung semiconductor |
128Kx8 Bit High-Speed CMOS Static RAM |
|
| 11 | KM681002CI |
Samsung semiconductor |
128Kx8 Bit High-Speed CMOS Static RAM |
|
| 12 | KM681002CL |
Samsung semiconductor |
128Kx8 Bit High-Speed CMOS Static RAM |
|