The KM681000E families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. PRODUCT FAMILY Power Dissipati.
• Process Technology: TFT
• Organization: 128Kx8
• Power Supply Voltage: 4.5~5.5V
• Low Data Retention Voltage: 2V(Min)
• Three state output and TTL Compatible
• Package Type: 32-DIP-600, 32-SOP-525, 32-TSOP1-0820F
CMOS SRAM
GENERAL DESCRIPTION
The KM681000E families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
PRODUCT FAMILY
Power Dis.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KM681000B |
Samsung |
128K x 8-bit Low Power CMOS Static RAM | |
2 | KM681000C |
Samsung semiconductor |
128K x8 bit Low Power CMOS Static RAM | |
3 | KM681001A |
Samsung semiconductor |
128K x 8 Bit High-Speed CMOS Static RAM | |
4 | KM681001A |
Samsung semiconductor |
128K x 8 Bit High-Speed CMOS Static RAM | |
5 | KM681001B |
Samsung semiconductor |
128K x 8 Bit High-Speed CMOS Static RAM | |
6 | KM681002A |
Samsung semiconductor |
128Kx8 High Speed Static RAM | |
7 | KM681002AI |
Samsung semiconductor |
128Kx8 High Speed Static RAM | |
8 | KM681002B |
Samsung semiconductor |
128Kx8 Bit High Speed Static RAM | |
9 | KM681002BI |
Samsung semiconductor |
128Kx8 Bit High Speed Static RAM | |
10 | KM681002C |
Samsung semiconductor |
128Kx8 Bit High-Speed CMOS Static RAM | |
11 | KM681002CI |
Samsung semiconductor |
128Kx8 Bit High-Speed CMOS Static RAM | |
12 | KM681002CL |
Samsung semiconductor |
128Kx8 Bit High-Speed CMOS Static RAM |