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The KM68FV8100 families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. 1M x 8 bit Super Low Pow.
• Process Technology: Full CMOS
• Organization: 1M x8
• Power Supply Voltage: 3.0~3.6V
• Low Data Retention Voltage: 1.5V(Min)
• Three state output and TTL Compatible
• Package Type: 44-TSOP2-400F/R, 48-FBGA-8.00x12.00
CMOS SRAM
GENERAL DESCRIPTION
The KM68FV8100 families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
1M x 8 bit Sup.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | KM68FV1000 |
Samsung Semiconductor |
CMOS SRAM |
|
| 2 | KM68FV2000 |
Samsung Semiconductor |
CMOS SRAM |
|
| 3 | KM68FR1000 |
Samsung Semiconductor |
CMOS SRAM |
|
| 4 | KM68FR2000 |
Samsung Semiconductor |
CMOS SRAM |
|
| 5 | KM68FS1000 |
Samsung Semiconductor |
CMOS SRAM |
|
| 6 | KM68FS2000 |
Samsung Semiconductor |
CMOS SRAM |
|
| 7 | KM68FS8100 |
Samsung Semiconductor |
CMOS SRAM |
|
| 8 | KM68FU1000A |
Samsung Semiconductor |
CMOS SRAM |
|
| 9 | KM68FU8100 |
Samsung Semiconductor |
CMOS SRAM |
|
| 10 | KM681000B |
Samsung |
128K x 8-bit Low Power CMOS Static RAM |
|
| 11 | KM681000C |
Samsung semiconductor |
128K x8 bit Low Power CMOS Static RAM |
|
| 12 | KM681000E |
Samsung semiconductor |
128Kx8 bit Low Power CMOS Static RAM |
|