KM6164002 - Samsung semiconductor

KM6164002 CMOS SRAM

CS H L L L WE X H X H OE X* H X L LB X X H L H L L L L X H L * NOTE : X means Don't Care. UB X X H H L L H L L Mode I/O1~I/O8 Not Select Output Disable High-Z High-Z DOUT Read High-Z DOUT DIN Write High-Z DIN I/O Pin I/O9~I/O16 High-Z High-Z High-Z DOUT DOUT High-Z DIN DIN Supply Current ISB, ISB1 ICC ICC ICC -8- Rev 2.0 June -1997 KM6164002, KM6164.

Features

¡Ü ¡Ü PRELIMINARY CMOS SRAM GENERAL DESCRIPTION The KM6164002 is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The KM6164002 uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte access by data byte control (UB, LB). The device is fabricated using SAMSUNG's advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The KM6164002 is pa.