KM6164002 |
Part Number | KM6164002 |
Manufacturer | Samsung semiconductor |
Description | CS H L L L WE X H X H OE X* H X L LB X X H L H L L L L X H L * NOTE : X means Don't Care. UB X X H H L L H L L Mode I/O1~I/O8 Not Select Output Disable High-Z High-Z DOUT Read High-Z DOUT DIN Write ... |
Features |
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PRELIMINARY CMOS SRAM
GENERAL DESCRIPTION
The KM6164002 is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The KM6164002 uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte access by data byte control (UB, LB). The device is fabricated using SAMSUNG's advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The KM6164002 is pa... |
Document |
KM6164002 Data Sheet
PDF 167.34KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KM6164000B |
Samsung semiconductor |
256Kx16 bit Low Power CMOS Static RAM | |
2 | KM6161000B |
Samsung Electronics |
64K X 16-Bit Low Power CMOS Static RAM | |
3 | KM6161002A |
Samsung |
CMOS SRAM | |
4 | KM6161002B |
Samsung |
CMOS SRAM | |
5 | KM6161002C |
Samsung |
CMOS SRAM |