The KM616V4000B families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature ranges and small package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. PRODUCT FAMILY Power Dissipation Pr.
• Process Technology : TFT
• Organization : 256Kx16
• Power Supply Voltage : 4.5~5.5V
• Low Data Retention Voltage : 2V(Min)
• Three state output and TTL Compatible
• Package Type : 44-TSOP2-400F/R
CMOS SRAM
GENERAL DESCRIPTION
The KM616V4000B families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature ranges and small package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation Product Fami.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KM6164002 |
Samsung semiconductor |
CMOS SRAM | |
2 | KM6161000B |
Samsung Electronics |
64K X 16-Bit Low Power CMOS Static RAM | |
3 | KM6161002A |
Samsung |
CMOS SRAM | |
4 | KM6161002B |
Samsung |
CMOS SRAM | |
5 | KM6161002C |
Samsung |
CMOS SRAM | |
6 | KM616FR1000 |
Samsung |
64K x 16-bit Super Low Power and Low Voltage Full CMOS Static RAM | |
7 | KM616FS1000 |
Samsung |
64K x 16-bit Super Low Power and Low Voltage Full CMOS Static RAM | |
8 | KM616FV1000 |
Samsung |
64K x 16-bit Super Low Power and Low Voltage Full CMOS Static RAM | |
9 | KM62256A |
Samsung Electronics |
32K X 8-Bit Static RAM | |
10 | KM62256AL |
Samsung Electronics |
32K X 8-Bit Static RAM | |
11 | KM62256AL-L |
Samsung Electronics |
32K X 8-Bit Static RAM | |
12 | KM62256BL |
Samsung |
32K x 8-Bit High Speed CMOS Static RAM |