KFG5616Q1M-DEB - Samsung semiconductor

KFG5616Q1M-DEB OneNAND256 FLASH MEMORY

is revised. 3. Changed Read while Load and Write While Program diagram. 4. Revised OTP Flow Chart 5. Added Multi Block Erase operation cases 6. Added Spare Assignment information 7. Added NAND Array Memory Map 8. Added OTP load/program/lock operation description 9. Revised OTP load/program/lock flow chart ; Excluded the fail case 10. Added Spare Assignment i.

Features

• Design Technology: 0.12µm
• Voltage Supply - 1.8V device(KFG5616Q1M) : 1.7V~1.95V - 2.65V device(KFG5616D1M) : 2.4V~2.9V - 3.3V device(KFG5616U1M) : 2.7V~3.6V
• Organization - Host Interface:16bit
• Internal BufferRAM(3K Bytes) - 1KB for BootRAM, 2KB for DataRAM
• NAND Array - Page Size : (1K+32)bytes - Block Size : (64K+2K)bytes FLASH MEMORY www.DataSheet4U.com ♦ Architecture ♦ Performance
• Host Interface type - Synchronous Burst Read : Clock Frequency: up to 54MHz : Linear Burst - 4 , 8 , 16 , 32 words with wrap-around : Continuous Sequential Burst(512 words) - Asynchronous Random Read.