10. Revised Reset Parameters and Timing Diagrams. Draft Date April 17, 2005 May 17, 2005 Remark Preliminary Final 1.1 1. Corrected the errata 2. Revised Invalid Block Table Creation Flow Chart. 3. Revised Multi Block Erase Description. 4. Revised Reset Mode Operation. Aug 12, 2005 Final 3 OneNAND256(KFG5616x1A-xxB5) FLASH MEMORY www.DataSheet4U.com .
including:
• A BootRAM and bootloader
• Two independent bi-directional 1KB DataRAM buffers
• A High-Speed x16 Host Interface
• On-chip Error Correction
• On-chip NOR interface controller This on-chip integration enables system designers to reduce external system logic and use high-density NAND Flash in applications that would otherwise have to use more NOR components. OneNAND takes advantage of the higher performance NAND program time, low power, and high density and combines it with the synchronous read performance of NOR. The NOR Flash host interface makes OneNAND an ideal solution for appli.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KFG5616D1A-PEB5 |
Samsung semiconductor |
OneNAND Specification FLASH MEMORY | |
2 | KFG5616D1M-DEB |
Samsung semiconductor |
OneNAND256 FLASH MEMORY | |
3 | KFG5616Q1A-DEB5 |
Samsung semiconductor |
OneNAND Specification FLASH MEMORY | |
4 | KFG5616Q1A-PEB5 |
Samsung semiconductor |
OneNAND Specification FLASH MEMORY | |
5 | KFG5616Q1M-DEB |
Samsung semiconductor |
OneNAND256 FLASH MEMORY | |
6 | KFG5616U1A-DIB5 |
Samsung semiconductor |
OneNAND Specification FLASH MEMORY | |
7 | KFG5616U1A-PIB5 |
Samsung semiconductor |
OneNAND Specification FLASH MEMORY | |
8 | KFG5616U1M-DIB |
Samsung semiconductor |
OneNAND256 FLASH MEMORY | |
9 | KFG5616x1A-xxB5 |
Samsung semiconductor |
OneNAND Specification FLASH MEMORY | |
10 | KFG1216D2A |
Samsung semiconductor |
FLASH MEMORY | |
11 | KFG1216D2M |
Samsung semiconductor |
FLASH MEMORY | |
12 | KFG1216Q2A |
Samsung semiconductor |
FLASH MEMORY |