5. Added CE don’t care state for Asynch Write, Load, Program, and Block Erase timing diagram 1. Added Copy Back Operation with Random Data Input 2. Changed tBA from 11ns to 11.5ns 3. Pended Active Erase Current Draft Date Nov. 4, 2004 Dec. 7, 2004 Remark Preliminary Preliminary 0.2 Dec. 24, 2004 Preliminary 0.3 1. Corrected the errata Jan. 13, 2005 2..
including:
• A BootRAM and bootloader
• Two independent bi-directional 2KB DataRAM buffers
• A High-Speed x16 Host Interface
• On-chip Error Correction
• On-chip NOR interface controller This on-chip integration enables system designers to reduce external system logic and use high-density NAND Flash in applications that would otherwise have to use more NOR components. OneNAND takes advantage of the higher performance NAND program time, low power, and high density and combines it with the synchronous read performance of NOR. The NOR Flash host interface makes OneNAND an ideal solution for appli.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KFG1216D2M |
Samsung semiconductor |
FLASH MEMORY | |
2 | KFG1216Q2A |
Samsung semiconductor |
FLASH MEMORY | |
3 | KFG1216Q2M |
Samsung semiconductor |
FLASH MEMORY | |
4 | KFG1216U2A |
Samsung semiconductor |
FLASH MEMORY | |
5 | KFG1216U2M |
Samsung semiconductor |
FLASH MEMORY | |
6 | KFG1G1612M-DEB5 |
Samsung semiconductor |
FLASH MEMORY | |
7 | KFG1G16Q2A-DEBx |
Samsung Electronics |
FLASH MEMORY | |
8 | KFG1G16Q2C |
Samsung Electronics |
1Gb OneNAND C-die | |
9 | KFG1G16Q2M |
Samsung semiconductor |
FLASH MEMOR | |
10 | KFG1G16U2B |
Samsung semiconductor |
1Gb OneNAND B-die | |
11 | KFG1G16U2B-DIB6 |
Samsung semiconductor |
1Gb OneNAND B-die | |
12 | KFG2816Q1M-DEB |
Samsung semiconductor |
(KFG2816Q1M-DEB / KFG2816U1M-DIB) Flash Memory |