KFG2816Q1M-DEB - Samsung semiconductor

KFG2816Q1M-DEB (KFG2816Q1M-DEB / KFG2816U1M-DIB) Flash Memory

5. Added OTP erase case NOTE 6. Revised case definitions of Interrupt Status Register 7. Added a NOTE to Command register 8. Added ECClogSector Information table 9. Removed ’data unit based data handling’ from description of Device Operation 10. Revised description on Warm/Hot/NAND Flash Core Reset 11. Revised Warm Reset Timing 12. Revised description for 4-.

Features

• Design Technology: 0.12µm
• Voltage Supply - 1.8V device(KFG2816Q1M) : 1.7V~1.95V - 3.3V device(KFG2816U1M) : 2.7V~3.6V
• Organization - Host Interface:16bit
• Internal BufferRAM(3K Bytes) - 1KB for BootRAM, 2KB for DataRAM
• NAND Array - Page Size : (1K+32)bytes - Block Size : (64K+2K)bytes FLASH MEMORY ♦ Architecture www.DataSheet4U.com ♦ Performance
• Host Interface type - Synchronous Burst Read : Clock Frequency: up to 54MHz : Linear Burst - 4 , 8 , 16 , 32 words with wrap-around : Continuous Sequential Burst(512 words) - Asynchronous Random Read : Access time of 76ns - Asynchronous .