KFG1216U2M - Samsung semiconductor

KFG1216U2M FLASH MEMORY

for below operations -. Reset -. Write Protection -. Burst Read Latency -. Dual Operation -. Invalid block definition and Identification method -. Error in write or read operation -. ECC 3. Revised program sequence 4. Some AC parameters are changed. tACH : 9ns-->7ns, tCES : 7ns-->9ns, tAAVDS : 5ns-->7ns tDS : 30ns-->10ns, tDH : 0ns-->4ns 5. Define new AC pa.

Features

♦ Architecture
• Design Technology: 0.12um
• Voltage Supply - 1.8V device(KFG1216Q2M) : 1.7V~1.95V - 2.65V device(KFG1216D2M) : 2.4V~2.9V - 3.3V device(KFG1216U2M) : 2.7V~3.6V
• Organization - Host Interface:16bit
• Internal BufferRAM(5K Bytes) - 1KB for BootRAM, 4KB for DataRAM
• NAND Array - Page Size : (2K+64)bytes - Block Size : (128K+4K)bytes FLASH MEMORY ♦ Performance
• Host Interface type - Synchronous Burst Read : Clock Frequency: up to 54MHz : Linear Burst - 4, 8, 16, 32 words with wrap-around : Continuous Sequential Burst(1K words) - Asynchronous Random Read : Access time of 76ns -.