This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=600V, ID=12A Drain-Source ON Resistance : RDS(ON)=0.6 (Max) @VGS=10V Qg(typ.)= 36nC MAXIMUM .
VDSS=600V, ID=12A Drain-Source ON Resistance : RDS(ON)=0.6 (Max) @VGS=10V Qg(typ.)= 36nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KF12N60P KF12N60F
Drain-Source Voltage Gate-Source Voltage
VDSS VGSS
600 30
V V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Drain Power Dissipation
Tc=25 Derate above 25
ID IDP EAS EAR dv/dt
PD
12 12
* 7.4 7.4
* 33 33
*
450
17
4.5 215 49.8 1.72 0.4
A
mJ mJ V/ns W W/
Maximum Junction Temperature Storage Temperature Range Th.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KF12N60F |
KEC |
N-channel MOSFET | |
2 | KF12N68F |
KEC |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
3 | KF12 |
STMicroelectronics |
VERY LOW DROP VOLTAGE REGULATORS WITH INHIBIT | |
4 | KF120 |
STMicroelectronics |
VERY LOW DROP VOLTAGE REGULATORS WITH INHIBIT | |
5 | KF124 |
Tesla Elektronicke |
Transistor | |
6 | KF125 |
Tesla Elektronicke |
Transistor | |
7 | KF10N50F |
KEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
8 | KF10N50FZ |
KEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
9 | KF10N50P |
KEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
10 | KF10N50PZ |
KEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
11 | KF10N60F |
KEC |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
12 | KF10N60P |
KEC |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |