SEMICONDUCTOR TECHNICAL DATA LOW VOLTAGE HIGH SPEED SWITCHING. FEATURES Low Forward Voltage : VF(2)=0.43V (Typ.) Small Package : ESC. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage VRM 40 Reverse Voltage VR 40 Maximum (Peak) Forward Current IFM 150 Average Forward Current IO 30 Surge Current (10ms) IFSM .
Low Forward Voltage : VF(2)=0.43V (Typ.) Small Package : ESC.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
VRM
40
Reverse Voltage
VR
40
Maximum (Peak) Forward Current
IFM
150
Average Forward Current
IO
30
Surge Current (10ms)
IFSM
200
Power Dissipation
PD
150
*
Junction Temperature
Tj
125
Storage Temperature Range
Tstg
-55 125
* : Mounted on a glass epoxy circuit board of 20 20mm,
pad dimension of 4 4mm.
UNIT V V mA mA mA mW
CATHODE MARK B A
KDR377E
SCHOTTKY BARRIER TYPE DIODE
C 1
2 D
1. ANODE 2. CATHODE
E
F
DIM A B C D .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KDR377 |
KEC |
Diode | |
2 | KDR378 |
KEC |
Diode | |
3 | KDR378E |
KEC |
SCHOTTKY BARRIER TYPE DIODE | |
4 | KDR322 |
KEC |
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE | |
5 | KDR331 |
KEC |
SCHOTTKY BARRIER TYPE DIODE | |
6 | KDR331E |
KEC |
SCHOTTKY BARRIER TYPE DIODE | |
7 | KDR331V |
KEC |
SCHOTTKY BARRIER TYPE DIODE | |
8 | KDR357 |
KEC |
SCHOTTKY BARRIER TYPE DIODE | |
9 | KDR367 |
KEC |
DIODE | |
10 | KDR367E |
KEC |
SCHOTTKY BARRIER TYPE DIODE | |
11 | KDR368 |
KEC |
DIODE | |
12 | KDR368E |
KEC |
DIODE |